NTE266 데이터 시트보기 (PDF) - NTE Electronics

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NTE266

Silicon NPN Transistor Darlington Power Amplifier

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Forward Current Transfer Ratio

Collector Saturation Voltage

Base Saturation Voltage

Collector Cutoff Current

Emitter Cutoff Current

Input Impedance

Collector Capacitance

Gain Bandwidth Product

Delay Time and Rise Time

Storage Time

Fall Time

hFE IC = 200mA, VCE = 5V

40k – –

hfe IC = 20mA, VCE = 5V, f = 1kHz – 20k –

VCE(sat) IC = 500mA, IB = 0.5mA, Note 2 –

– 1.5 V

VBE(sat) IC = 500mA, IB = 0.5mA, Note 2 –

– 2.0 V

ICES VCE = 50V, TJ = +25°C

– – 0.5 µA

ICBO VCE = 50V, TJ = +150°C

– – 20 µA

IEBO VEB = 13V

– – 0.1 µA

hie IC = 20mA, VCE = 5V, f = 1kHz 50 500 – Ω

Ccbo VCB = 10V, f = 1MHz

– 5 10 pF

fT VCE = 5V, IC = 20mA

– 75 – MHz

td + tr IC = 1A, IB1 = 1mA

– 100 – ns

ts IC = 1A, IB1 = IB2 = 1mA

– 350 – ns

tf IC = 1A, IB1 = IB2 = 1mA

– 800 – ns

Note 2. Pulsed measurement: Pulse Width = 300µs, Duty Cycle ≤ 2%.

.380 (9.56)

.180 (4.57)

C

.132 (3.35) Dia

.500

C

(12.7)

1.200

.325

(9.52)

B

(30.48)

Ref

.070 (1.78) x 45°

.300

Chamf

E

(7.62)

.050 (1.27)

.400

(10.16)

Min

E BC

.100 (2.54)

.100 (2.54)

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