NTE2336 데이터 시트보기 (PDF) - NTE Electronics

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NTE2336

Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Turn–On Time

Storage Time

Fall Time

Energy Handling Capacity

ton VCC = 50V, IC = 4A,

tstg

IB1 = 8mA, IB2 = –8mA

– 0.5 – µs

–

4

– µs

tf

–

1

– µs

Es/b IC = 1A, L = 100mH, RBE = 100Ω

50

–

– mJ

C

B

E

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.669

(17.0)

Max

BCE

.122 (3.1)

Dia

.165

(4.2)

.531

(13.5)

Min

.173 (4.4) Max

.114 (2.9) Max

.100 (2.54)

.059 (1.5) Max

NOTE: Tab is isolated

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