NTE2638 데이터 시트보기 (PDF) - NTE Electronics

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NTE2638

Silicon NPN Transistor Darlington

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0, Note 3

400 –

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 3

400 –

Collector–Emitter Sustaining Voltage VCEX(sus) IC = 7A

400 –

Collector Cutoff Current

ICEO VCE = 400V, IB = 0

––

Emitter Cutoff Current

IEBO VEB = 8V, IC = 0

––

DC Current Gain

hFE IC = 2.5A, VCE = 5V, Note 3, Note 4 150 –

IC = 5A, VCE = 5V, Note 3, Note 4 50 –

IC = 7A, VCE = 5V, Note 3, Note 4 15 –

Base–Emitter Voltage

VBE IB = 100mA, IC = 2A, Note 3, Note 4 – –

IB = 250mA, IC = 5A, Note 3, Note 4 – –

Collector–Emitter Saturation

Voltage

VCE(sat) IB = 10mA, IC = 1A, Note 3, Note 4 – –

IB = 100mA, IC = 2A, Note 3, Note 4 – –

IB = 250mA, IC = 5A, Note 3, Note 4 – –

Diode Forward Voltage

VF IF = 7A, Note 3, Note 4

––

Small–Signal Current Gain

hfe VCE = 5V, IC = 500mA, f = 1kHz

200 –

Small–Signal Forward Current

Transfer Ratio

|hfe| VCE = 5V, IC = 500mA, f = 1kHz

10 –

–V

–V

–V

250 µA

15 mA

–

–

–

2.2 V

2.3 V

1.5 V

1.5 V

2.0 V

3.5 V

–

–

Collector Capacitance

Cobo IE = 0, VCB = 10V, f = 1MHz

– – 100 pF

Resistive–Load Switching Characteristics (TC = +25°C unless otherwise specified)

Turn–Off Storage Time

Turn–Off Fall Time

Turn–Off Rise Time

ts IC = 5A, IB1 = 250mA,

tf

IB2 = –250mA, VBE(off) = –7.3V,

RL = 50Ω, Note 5

tr

– 3400 – ns

– 1520 – ns

– 160 – ns

Turn–On Delay Time

td

– 20 – ns

Inductive–Load Switching Characteristics (TC = +25°C unless otherwise specified)

Voltage Storage Time

Current Storage Time

Voltage Rise Time

tsv V(clamp) = Min VCEX(sus), ICM = 5A, – 3900 – ns

tsi

IB1 = 250mA, IB2 = –250mA,

Note 5

– 4700 – ns

trv

– 1200 – ns

Storage Rise Time

tri

– 1200 – ns

Turn–Off Crossover Time

txo

– 2000 – ns

Note 3. These parameters must be measured using pulse techniques, tw = 300µs, duty cycle ≤ 2%.

Note 4. These parameters are measured with voltage–sensing contacts separate from the current–

carrying contacts located within 1/8” (3.2mm) from the device body.

Note 5. Voltage and current values shown are nominal; exact values vary slightly with transistor pa-

rameters.

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