NTE123 데이터 시트보기 (PDF) - NTE Electronics

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NTE123

Silicon NPN Transistor General Purpose Audio Amplifier, Switch

NTE Electronics 

NTE123

Silicon NPN Transistor

General Purpose Audio Amplifier, Switch

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA

Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33mW/°C

Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0

Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0

Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0

Collector Cutoff Current

ICBO

VCE = 60V, IE = 0

VCE = 60V, IE = 0, TA = +150°C

ICEX VCE = 60V, VEB(off) = 3V

Emitter Cutoff Current

IEBO VEB = 3V, IC = 0

Base Cuttoff Current

IBL

VCE = 60V, VEB(off) = 3V

Min Typ Max Unit

40 –

–

V

75 –

–

V

6

–

–

V

–

– 0.01 µA

–

– 10

µA

–

– 10

nA

–

– 10

nA

–

– 20

nA

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