NTE65 데이터 시트보기 (PDF) - NTE Electronics

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NTE65

Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Dynamic Characteristics

Current–Gain Bandwidth Product

Collector–Base Capacitance

Functional Tests

fT

VCE = 10V, IC = 14mA, f = 0.5GHz

Ccb VCB = 10V, IE = 0, f = 1MHz

– 5.0 – GHz

– 0.5 1.0 pF

Noise Figure

Power Gain at Optimum Noise Figure

Maximum Available Power Gain

(Note 1)

NF

GNF

Gmax

VCE = 10V, IC = 2mA, f = 0.5GHz

VCE = 10V, IC = 2mA, f = 1.0GHz

VCE = 10V, IC = 2mA, f = 0.5GHz

VCE = 10V, IC = 2mA, f = 1.0GHz

VCE = 10V, IC = 2mA, f = 0.5GHz

VCE = 10V, IC = 2mA, f = 1.0GHz

– 2.4 – dB

– 3.0 – dB

– 15 – dB

– 10 – dB

– 18 – dB

– 12 – dB

Note

1. Gmax =

|S21|2

(I – |S11|2) (I – |S22|2)

.205 (5.2) Dia Max

.039 (1.0)

.005 (0.15)

.098 (2.5)

.197

(5.0)

Emitter

Collector

Base

.147

(3.75)

Max

.354 (9.0)

.197 5.0)

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