NTE163A 데이터 시트보기 (PDF) - NTE Electronics

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NTE163A

Silicon NPN Transistor Horizontal Deflection

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics (Note 2)

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Emitter–Base Voltage

ON Characteristics (Note 2)

VCEO(sus) IC = 100mA, IB = 0

ICES VCE = 1500V, VBE = 0

VEBO IE = 10mA, IC = 0

700 – – V

– – 1.0 mA

5––V

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(sat)

IC = 4.5A, VCE = 5V

IC = 4.5A, IB = 2A

IC = 4.5A, IB = 2A

2.25 – –

––5V

– – 1.5 V

Current Gain–Bandwidth Product

Output Capacitance

Switching Characteristics

fT IC = 100mA, VCE = 5V, f = 1MHz – 4 – MHz

Cob VCB = 10V, IE = 0, f = 1MHz

– 125 – pF

Fall Time

tf

IC = 4.5A, IB = 1.8A, LB = 10µH – 0.6 – µs

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

1.187 (30.16)

.215 (5.45)

.430

(10.92)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

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