BPX60 데이터 시트보기 (PDF) - Infineon Technologies

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BPX60

Silicon Photodiode with Enhanced Blue Sensitive

Infineon Technologies 

BPX 60

Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)

Characteristics (TA = 25 °C, standard light A, T = 2856 K)

Bezeichnung

Description

Spektrale Fotoempfindlichkeit, λ = 400 nm

Spectral sensitivity

Quantenausbeute, λ = 400 nm

Quantum yield

Leerlaufspannung, Ev = 1000 Ix

Open-circuit voltage

Kurzschlußstrom

Short-circuit current

Ee = 0.5 mW/cm2, λ = 400 nm

Anstiegs- und Abfallzeit des Fotostromes

Rise and fall time of the photocurrent

RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 70 µA

Durchlaßspannung, IF = 100 mA, E = 0

Forward voltage

Kapazität, VR = 0 V, f = 1 MHz, E = 0

Capacitance

Temperaturkoeffizient von VO

Temperature coefficient of VO

Temperaturkoeffizient von ISC

Temperature coefficient of ISC

Rauschäquivalente Strahlungsleistung

Noise equivalent power

VR = 10 V, λ = 400 nm

Nachweisgrenze, VR = 10 V, λ = 400 nm

Detection limit

Symbol

Symbol

Sλ

η

VO

ISC

tr, tf

VF

C0

TCV

TCI

NEP

D*

Wert

Value

0.20

0.62

460

7.4 (≥ 5.4)

3.0

1.3

580

– 2.6

0.18

2.4 × 10–13

1.2 × 1012

Einheit

Unit

A/W

Electrons

Photon

mV

µA

µs

V

pF

mV/K

%/K

W

√Hz

cm · √Hz

W

Semiconductor Group

355

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