2SB817 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SB817 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
VBE
Base-emitter on voltage
IC=-1A;VCE=-5V
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-6A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-5V
COB
Collector output capacitance
IE=0;f=1MHz;VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
IC=-1.0A IB1=-IB2=-0.1A
tf
Fall time
hFE-1 Classifications
D
E
60-120
100-200
Product Specification
2SB817
MIN TYP. MAX UNIT
-140
V
-160
V
-6
V
-1.1
V
-1.5
V
-0.1 mA
-0.1 mA
60
200
20
15
MHz
300
pF
0.25
μs
1.61
μs
0.53
μs
2
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