BSM 101 AR
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
Gate threshold voltage
VGS = VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 50 V, VGS = 0
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0
Drain-source on-state resistance
VGS = 10 V, ID = 200 A
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × RDS(on) , max. ID = 200 A
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on Time ton (ton = td (on) + tr)
VCC = 40 V, VGS = 10 V
ID = 200 A, RG = 3.3 Ω
Turn-off Time toff (toff = td (off) + tf)
VCC = 40 V, VGS = 10 V
ID = 200 A, RG = 3.3 Ω
Symbol
min.
V(BR)DSS
50
VGS(th)
2.1
I DSS
–
–
IGSS
–
R DS(on)
–
gfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
156
–
–
–
–
–
–
–
Values
Unit
typ.
max.
V
–
–
3.0
4.0
µA
50
250
300
1000
nA
10
100
mΩ
2.6
3.0
200
–
S
18
24
nF
9
12
3
4
280
–
ns
220
–
220
–
60
–
Semiconductor Group
18