FDS8433A(1998) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS8433A Datasheet PDF : 8 Pages
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Typical Characteristics (continued)
5
I D =-5.0A
4
3
VDS= -5V
-15V
-10V
2
1
0
0
4
8
12
16
20
Qg , GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
100
10
RDS(ON) LIMIT
1
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 125°C/W
T A = 25°C
100us
1ms
10ms
1s100ms
10s
DC
0.01
0.1 0.2
0.5 1
2
5 10 20
50
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
3000
2000
1000
500
Ciss
Coss
200
100 f = 1 MHz
VGS = 0 V
50
0.1 0.2
0.5
1
2
5
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Crss
10
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
R θJA=125°C/W
TA= 25°C
30
20
10
0
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0 .5
0 .2
0 .1
0.05
0.02
0.01
0.005
D = 0.5
0 .2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0 .0 0 0 1
0.001
0.01
0.1
1
t1 , TIM E (sec)
R θJA (t) = r(t) * R θJA
R θJA =125°C /W
P (p k )
t1
t2
TJ - TA = P * R θJA (t)
D uty C y cle, D = t1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
FDS8433A Rev. B1
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