5110H3 데이터 시트보기 (PDF) - Power Innovations

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5110H3

FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Power Innovations 

TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ

FORWARD-CONDUCTING

UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

JANUARY 1998 - REVISED MARCH 1999

electrical characteristics for terminal pair, TA = 25°C (unless otherwise noted) (continued)

dv/dt

ID

PARAMETER

Critical rate of rise of

off-state voltage

Off-state current

TEST CONDITIONS

Linear voltage ramp, Maximum ramp value < 0.85VDRM

VD = -50 V

f = 100 kHz, Vd = 1 Vrms, VD = -1V,

(see Note 6)

f = 100 kHz, Vd = 1 Vrms, VD = -2 V

Coff Off-state capacitance

f = 100 kHz, Vd = 1 Vrms, VD = -50 V

f = 100 kHz, Vd = 1 Vrms, VD = -100 V

MIN

-5

TA = 85°C

‘5070

‘5080

‘5110

‘5150

‘5070

‘5080

‘5110

‘5150

‘5070

‘5080

‘5110

‘5150

‘5150

TYP MAX

-10

300 420

280 390

240 335

140 195

260 365

245 345

205 285

120 170

90 125

80 110

65

90

35

50

30

40

UNIT

kV/µs

µA

pF

NOTE 6: Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly

dependent on connection inductance.

thermal characteristics

PARAMETER

RθJA Junction to free air thermal resistance

TEST CONDITIONS

EIA/JESD51-3 PCB, IT = ITSM(1000),

TA = 25 °C, (see Note 7)

265 mm x 210 mm populated line card,

4-layer PCB, IT = ITSM(1000), TA = 25 °C

MIN TYP MAX UNIT

113

°C/W

50

NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

PRODUCT INFORMATION

3

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