OP186GRT(1998) 데이터 시트보기 (PDF) - Analog Devices
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OP186GRT Datasheet PDF : 12 Pages
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OP186
ELECTRICAL CHARACTERISTICS (VS = +2.7 V, VCM = +1.35 V, TA = +25؇C unless otherwise noted)1
Parameter
Symbol
Conditions
Min Typ Max
INPUT CHARACTERISTICS␣
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Short Circuit Limit
POWER SUPPLY␣
Power Supply Rejection Ratio
Supply Current/Amplifier
DYNAMIC PERFORMANCE␣
Slew Rate
Turn-On Time
Gain Bandwidth Product
Phase Margin
VOS2
IB
IOS
VCM
CMRR
AVO
∆VOS/∆T
∆IB/∆T
∆IOS/∆T
VOH
VOL
ISC
PSRR
ISY
SR
GBP
Φo
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
0
VCM = 0 V to 1.7 V
65
–40°C ≤ TA ≤ +125°C
60
RL = 1 MΩ, VO = 0.3 V to 2.4 V 5
–40°C ≤ TA ≤ +125°C
2
0.6 5
6
3
7
10
0.1 2
5
1.7
90
22
3.5
30
3
RL = 100 kΩ to GND
–40°C to +125°C
RL = 100 kΩ to V+
–40°C to +125°C
2.625
2.6
2.665
22 50
75
± 0.8
VS = 2.7 V to 12 V
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
RL =100 kΩ, CL = 15 pF
AV = 1, VO = 1
AV = 20, VO = 1
78 95
76
4.2 5.5
7
61
17
25
155
59
NOISE PERFORMANCE␣
Voltage Noise Density
en
f = 1 kHz
80
Current Noise Density
in
<1
NOTES
1+2.7 V specifications are guaranteed by +2.2 V and ±5 V testing.
2VOS is tested under a no load condition.
Specifications subject to change without notice.
Units
mV
mV
nA
nA
nA
nA
V
dB
dB
V/mV
V/mV
µV/°C
pA/°C
pA/°C
V
V
mV
mV
mA
dB
dB
µA
µA
V/ms
µs
µs
kHz
Degrees
nV/√Hz
pA/√Hz
REV. 0
–3–
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