2N4403TAR 데이터 시트보기 (PDF) - Fairchild Semiconductor

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2N4403TAR

PNP General-Purpose Amplifier

Fairchild Semiconductor 

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

VCEO

VCBO

VEBO

IC

TJ, TSTG

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

-40

V

-40

V

-5.0

V

-600

mA

-55 to +150

°C

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

PD

RθJC

RθJA

Total Device Dissipation

Derate Above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max.

2N4403(3)

MMBT4403(4)

625

350

5.0

2.8

83.3

200

357

Unit

mW

mW/°C

°C/W

°C/W

Notes:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.

© 2001 Fairchild Semiconductor Corporation

2N4403 / MMBT4403 Rev. 1.1.1

2

www.fairchildsemi.com

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