2N4403TAR 데이터 시트보기 (PDF) - Fairchild Semiconductor
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2N4403TAR Datasheet PDF : 11 Pages
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Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown
Voltage(5)
IC = -1.0 mA, IB = 0
V(BR)CBO
Collector-Base Breakdown
Voltage
IC = -0.1 mA, IE = 0
V(BR)EBO Emitter-Base Breakdown Voltage
IBL
Base Cut-Off Current
ICEX Collector Cut-Off Current
On Characteristics
IE = -0.1 mA, IC = 0
VCE = -35 V, VEB = -0.4 V
VCE = -35 V, VEB = -0.4 V
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation
Voltage(5)
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -150 mA, VCE = -2.0 V(5)
IC = -500 mA, VCE = -2.0 V(5)
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
IC = -150 mA, IB = -15 mA(5)
IC = -500 mA, IB = -50 mA
fT
Current Gain - Bandwidth Product
IC = -20 mA, VCE = -10 V,
f = 100 MHz
Ccb
Collector-Base Capacitance
VCB = -10 V, IE = 0,
f = 140 kHz
Ceb
Emitter-Base Capacitance
VBE = -0.5 V, IC = 0,
f = 140 kHz
hie
Input Impedance
IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz
hre
Voltage Feedback Ratio
IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz
hfe
Small-Signal Current Gain
IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz
hoe
Output Admittance
IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz
Switching Characteristics
td
Delay Time
tr
Rise Time
VCC = -30 V, IC = -150 mA,
IB1 = -15 mA
ts
Storage Time
tf
Fall Time
VCC = -30 V, IC = -150 mA,
IB1 = IB2 = -15 mA
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Min.
-40
-40
-5.0
30
60
100
100
20
-0.75
200
1.5
0.1
60
1
Max. Unit
V
V
V
-0.1
μA
-0.1
μA
300
-0.40
V
-0.75
-0.95
V
-1.30
MHz
8.5
pF
30
pF
15.0
8.0
kΩ
x10-4
500
100
μmhos
15
ns
20
ns
225
ns
30
ns
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
3
www.fairchildsemi.com
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