BTS712N1(2004) 데이터 시트보기 (PDF) - Infineon Technologies
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BTS712N1 Datasheet PDF : 15 Pages
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BTS712N1
Overvoltage protection of logic part
Input circuit (ESD protection), IN1...4 GND1/2 or GND3/4
IN
RI
ESD-ZD I
II
GND
RI
IN
IN
ST
R ST
V Z2
Logic
+ Vbb
ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a drift of
the zener voltage (increase of up to 1 V).
V Z1
R GND
GND
Status output, ST1/2 or ST3/4
Signal GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.,
RGND = 150 Ω
+5V
R ST(ON)
ST
Reverse battery protection
± 5V
- Vbb
GND
ESD-
ZD
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 Ω
at 1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
RST
IN
ST
Logic
RI
GND
Power
Inverse
Diode
OUT
Inductive and overvoltage output clamp,
OUT1...4
+Vbb
VZ
RGND
RL
Signal GND
Power GND
RGND = 150 Ω, RI = 3.5 kΩ typ,
Temperature protection is not active during inverse current
operation.
V ON
OUT
Open-load detection, OUT1...4
OFF-state diagnostic condition:
VOUT > 3 V typ.; IN low
PROFET
Power GND
VON clamped to VON(CL) = 47 V typ.
OFF
I L(OL)
Logic
unit
Open load
detection
V OUT
Signal GND
Semiconductor Group
9
2004-Mar-11
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