BTB20BW 데이터 시트보기 (PDF) - STMicroelectronics

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BTB20BW

SNUBBERLESS TRIACS

STMicroelectronics 

BTA20 BW/CW BTB20 BW/CW

THERMAL RESISTANCE

Symbol

Parameter

Rth (j-a) Junction to ambient

Rth (j-c) DC Junction to case for DC

BTA

BTB

Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz)

BTA

BTB

Value

60

2.8

1.7

2.1

1.3

GATE CHARACTERISTICS (maximum values)

PG(AV) = 1W PGM = 10W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs)

Unit

°C/W

°C/W

°C/W

ELECTRICAL CHARACTERISTICS

Symbol

Test conditions

Quadrant

IGT

VD = 12V (DC) RL = 33Ω

Tj = 25°C

I - II - III

MIN.

MAX.

VGT

VD = 12V (DC) RL = 33Ω

Tj = 25°C

VGD

VD = VDRM

RL = 3.3kΩ Tj =125°C

I - II - III

I - II - III

MAX.

MIN.

tgt

VD = VDRM IG = 500mA

dIG/dt = 3A/µs

Tj = 25°C

I - II - III

TYP.

IL

IG = 1.2IGT

Tj = 25°C

I - III

TYP.

II

I - II - III

MAX.

IH*

IT = 500mA Gate open

Tj = 25°C

MAX.

VTM * ITM = 28A tp = 380µs

Tj = 25°C

MAX.

IDRM

IRRM

VDRM rated

VRRM rated

Tj = 25°C

Tj = 125°C

MAX.

MAX.

dV/dt * Linear slope up to

VD = 67% VDRM gate open

Tj = 125°C

TYP.

MIN.

(dI/dt)c* Without snubber

Tj = 125°C

TYP.

MIN.

* For either polarity of electrode A2 voltage with reference to electrode A1

BTA / BTB20

BW

CW

2

1

50

35

1.5

0.2

2

50

-

90

-

-

80

75

50

1.70

0.01

3

750

500

500

250

36

22

18

11

Unit

mA

V

V

µs

mA

mA

V

mA

V/µs

A/ms

2/6

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