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RMTR13390 데이터 시트보기 (PDF) - Raytheon Company

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RMTR13390
Raytheon
Raytheon Company Raytheon
RMTR13390 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RMTR13390
13-39 GHz Tripler MMIC
Description
ADVANCED INFORMATION
The RMTR13390 is a 13 to 39 GHz Tripler designed to be used in the LO chain of point to point radios, point to
multi-point communications, LMDS, and other millimeter wave applications. The RMTR13390 is a three stage
amplifier in which the first stage acts as a harmonic generator followed by two stages of amplification at 3Fo. The
RMTR13390 utilizes Raytheon’s advanced 0.15 µm gate length PHEMT process and is sufficiently versatile to
serve in a variety of multiplier applications.
Features
2 mil substrate
Conversion Loss 5 dBm (typ.)
Wide operating bandwidth
Chip size 3.224 mm x 1.134 mm
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage (+5 V Typical)
Negative DC Voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
Id
PIN
TC
Tstg
Rj
Value
+6
-2
+8
187
+22
-30 to +85
-55 to +125
117
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C), 50 system,
Vd = +5 V, Quiescent
current (Idq)= 100 mA,
Pin=+17 dBm
Parameter
Min
Input Frequency Range 12
Output Frequency Range 36
Gate Supply Voltage (Vg)1
Input Drive Power @ Fo +15
Output Power @ 3Fo
Typ Max Unit
13.5 GHz
40.5 GHz
- 0.2
V
+17
dBm
+12
dBm
Parameter
Min
Conversion Loss
Fundamental Rejection
2nd Harmonic Rejection
4th Harmonic Rejection
Input Return Loss
Output Return Loss
Typ Max Unit
5
dBm
-15
dBc
-25
dBc
-25
dBc
8
dB
7
dB
www.raytheon.com/micro
Note: 1. Typical range of the negative gate voltage is -0.5 to 0.0V to set typical Idq of 100 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised April 6, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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