LRS1342 데이터 시트보기 (PDF) - Sharp Electronics

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LRS1342

Stacked Chip 16M Flash Memory and 2M SRAM

Sharp Electronics 

LRS1341/LRS1342

Stacked Chip (16M Flash & 2M SRAM)

DC CHARACTERISTICS

TA = -25°C to + 85°C, VCC = 2.7 V to 3.6 V

PARAMETER

SYMBOL

CONDITION

MIN. TYP.1 MAX. UNIT NOTES

Input leakage current

Output leakage current

Standby Current

ILI

ILO

ICCS

VIN = VCC or GND

VOUT = VCC or GND

F-CE = F-RP = F-VCC ± 0.2 V

F-WP = F-VCC ± 0.2 V

or F-GND ± 0.2 V

-1.5

+1.5

µA

-1.5

+1.5

µA

25

50

µA

2

F-CE = F-RP = VIH, F-WP = VIH or VIL

0.2

2

mA

Deep Power-Down Current

ICCD

F-RP = F-GND ± 0.2 V,

IOUT (F-RY/BY) = 0 mA

5

10

µA

F-VCC Read Current

ICCR

CMOS input, F-CE = F-GND,

f = 5 MHz, IOUT = 0 mA

TTL input, F-CE = F-GND,

f = 5 MHz, IOUT = 0 mA

25

mA 3, 4

30

mA 3, 4

Word Write Current

ICCW

F-VPP = 2.7 V to 3.6 V

F-VPP = 11.4 V to 12.6 V

17

mA

12

mA

Block Erase Current

ICCE

F-VPP = 2.7 V to 3.6 V

F-VPP = 11.4 V to 12.6 V

17

mA

12

mA

Word Write Block Erase

Suspend Current

ICCWS

ICCES

F-CE = VIH

6

mA

Standby or Read Current

IPPS

IPPR

F-VPP = F-VCC

F-VPP > F-VCC

±2

±15

µA

10

200

µA

Deep Power-Down Current

IPPD F-RP = F-GND ± 0.2 V

0.1

5

µA

F-VPP Word Write Current

IPPW

F-VPP = 2.7 V to 3.6 V

F-VPP = 11.4 V to 12.6 V

12

40

mA

30

mA

Block Erase Current

IPPE

F-VPP = 2.7 V to 3.6 V

F-VPP = 11.4 V to 12.6 V

8

25

mA

20

mA

Word Write or Block Erase

Suspend Current

IPPWS

IPPES

F-VPP = VPPH

10

200

µA

Standby Current

ISB

S-CE1, S-CE2 ≥ S-VCC - 0.2 V

or S-CE2 ≤0.2 V

45

µA

ISB1 S-CE1 = VIH or S-CE2 = VIL

3

mA

S-VCC

Operation Current

ICC1

ICC2

S-CE1 = VIL, S-CE2 = VIH, VIN = VIL or

VIH, tCYCLE = MIN., II/O = 0 mA

S-CE1 = 0.2 V, S-CE2 = S-VCC - 0.2 V,

VIN = S-VCC - 0.2 V, or 0.2 V

tCYCLE = 1 µs, II/O = 0 mA

45

mA

8

mA

Input LOW Voltage

VIL

-0.2

0.6

V

Input HIGH Voltage

VIH

2.2

VCC + 0.2 V

Output LOW Voltage

VOL IOL = 0.5 mA

0.4

V

2

Output HIGH Voltage (CMOS)

VOH1 IOH = -0.5 mA

2.2

V

2

F-VPP Lockout during Normal Operations VPPLK

1.5

V

5

F-VPP Word Write or Block Erase

Operations

VPPH1

VPPH2

2.7

3.6

V

11.4

12.6

V

F-VCC Lockout Voltage

VLKO

1.5

V

F-RP Unlock Voltage

VHH Unavailable F-WP

11.4

12.6

V

6

NOTES:

1. Reference values at VCC = 3.0 V and TA = +25°C.

2. Includes F-RY/BY.

3. Automatic Power Savings (APS) for Flash Memory reduces typi-

cal ICCR to 3 mA at 2.7 VCC in static operation.

4. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs

are either VIL or VIH.

5. Block erases and word writes are inhibited when F-VPP ≤VPPLK and

not guaranteed in the range between VPPLK (MAX.) and VPPH

(MIN.), and above VPPH (MAX.).

6. F-RP connection to a VHH supply is allowed for a maximum cumu-

lative period of 80 hours.

8

Data Sheet

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