LRI512 데이터 시트보기 (PDF) - STMicroelectronics

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LRI512

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

STMicroelectronics 

LRI512

LRI512 TO VCD FRAMES

Frames are delimited by an SOF and EOF and are

implemented using code violation. Unused options

are reserved for future use.

For the low data rate, the same subcarrier fre-

quency or frequencies are used. In this case the

number of pulses shall be multiplied by 4.

The VCD is ready to receive a response frame

from the LRI512 within less than t1 after having

sent a command frame (as specified in Table 59).

SOF When Using One Subcarrier

High Data Rate. SOF comprises 3 parts: (see

Figure 20)

– an unmodulated time of 56.64 µs,

– 24 pulses of 423.75 kHz (fc/32),

– a logic 1 which starts with an unmodulated time

of 18.88 µs followed by 8 pulses of 423.75 kHz.

Low Data Rate. SOF comprises 3 parts: (see

Figure 21)

– an unmodulated time of 226.56 µs,

– 96 pulses of 423.75 kHz (fc/32),

– a logic 1 which starts with an unmodulated time

of 75.52 µs followed by 32 pulses of

423.75 kHz.

Figure 20. Start of Frame, High Data Rate, One Subcarrier

113.28 µs

Figure 21. Start of Frame, Low Data Rate, One Subcarrier

37.76 µs

AI06671

453.12 µs

149.86 µs (ISO=151.04 µs)

AI06672

11/54

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