LRI512 데이터 시트보기 (PDF) - STMicroelectronics

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LRI512

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

STMicroelectronics 

LRI512

COMMUNICATIONS SIGNAL FROM LRI512 TO VCD

For some parameters several modes have been

defined in order to allow for use in different noise

environments and application requirements.

Load Modulation

The LRI512 is capable of communication to the

VCD via an inductive coupling area in which the

carrier is loaded to generate a subcarrier with fre-

quency fS. The subcarrier is generated by switch-

ing in a load in the LRI512.

Subcarrier

ers mode, the LRI512 generates a continuous

phase relationship between fS1 and fS2.

Data Rates

The LRI512 can respond using the low or the high

data rate format. The selection of the data rate is

made by the VCD using the second bit in the pro-

tocol header.

Table 4 shows the different data rates the LRI512

can achieve using each combination.

The LRI512 supports the one subcarrier and two

subcarriers response formats. These formats are

selected by the VCD using the first bit in the proto-

col header.

Table 4. Response Data Rate

Data Rate One Subcarrier Two Subcarriers

When one subcarrier is used, the frequency fS1 of

the subcarrier load modulation is 423.75kHz (fC/

Low

6.62 kbit/s

(fC/2048)

32).

When two subcarriers are used, the frequency fS1

is 423.75 kHz (fC/32), and the frequency fS2 is

High

26.48 kbit/s

(fC/512)

484.28 kHz (fC/28). When using the two subcarri-

6.67 kbit/s

(fC/2032)

26.69 kbit/s

(fC/508)

8/54

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