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HCF4502BEY 데이터 시트보기 (PDF) - STMicroelectronics

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HCF4502BEY
ST-Microelectronics
STMicroelectronics ST-Microelectronics
HCF4502BEY Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
HCC/HCF4502B
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25 °C, CL = 50 pF, RL = 200 k
typical temperature coefficient for all VDD values is 0.3 %/°C, all input rise and fall times = 20 ns)
Symbol
Parameter
tP HL Data or Inhibit Delay Time
Test Conditions
V al ue
V D D (V) Min. Typ. Max.
5
135 270
10
60 120
Unit
ns
15
40 80
tP L H Data or Inhibit Delay Time
5
190 380
10
90 180 ns
15
65 30
tP HZ
Disable Delay Time (output high
to high impedance)
5
60 120
10
40 80
ns
tP ZH
Disable Delay Time (high
impedance to output high)
15
30 60
5
110 220
10
50 100
ns
15
40 80
tPL Z Disable Delay Time (output low to
high impedance)
5
125 250
10
65 130 ns
15
55 110
tPZ L Disable Delay Time (high
impedance to output low)
5
125 250
10
55 110
ns
15
40 80
tT L H Tansition Time
5
100 200
10
50 100
ns
15
40 80
tT HL Transition Time
5
60 120
10
30 60
ns
15
20 40
Minimum Output High (source) Current Charac-
teristics.
Typical Output Low (sink) Current.
4/11

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