K3053 데이터 시트보기 (PDF) - NEC => Renesas Technology

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K3053

Switching P-cannel power MOSFET, 25A, 60V

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3053

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK3053 is N-Channel MOS Field Effect Transistor

designed for high current switching applications in consumer

instruments.

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3053

Isolated TO-220

FEATURES

• Low On-State Resistance

RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A)

RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A)

• Low Ciss : Ciss = 790 pF TYP.

• Built-in Gate Protection Diode

• Isolated TO-220 package

(Isolated TO-220)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

VDSS

60

V

Gate to Source Voltage

VGSS(AC)

±20

V

Gate to Source Voltage

VGSS(DC)

+20, −10

V

Drain Current (DC)

Drain Current (Pulse) Note1

ID(DC)

ID(pulse)

±25

A

±75

A

Total Power Dissipation (TC = 25°C)

PT

30

W

Total Power Dissipation (TA = 25°C)

PT

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Single Avalanche Current Note2

Single Avalanche Energy Note2

Tstg

–55 to +150 °C

IAS

12.5

A

EAS

15.6

mJ

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

!

2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D12912EJ3V0DS00 (3rd edition)

Date Published May 2001 NS CP(K)

The mark ! shows major revised points.

©

Printed in Japan

1999, 2000

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