MTP3N50E_D 데이터 시트보기 (PDF) - Motorola => Freescale
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MTP3N50E_D Datasheet PDF : 8 Pages
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MTP3N50E
1000
800
TJ = 25°C
VGS = 0
600
Ciss
400
Crss
200
VDS = 0
Coss
0
10 5
0
5 10 15 20 25
VGS VDS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 16. Capacitance Variation
16
12
TJ = 25°C
ID = 3 A
8
VDS = 100 V
250 V
400 V
4
0
0
5
10
15
20
25
QG, TOTAL GATE CHARGE (nC)
Figure 17. Gate Charge versus
Gate–To–Source Voltage
+18 V
47 k
Vin
15 V
100 k
2N3904
47 k
1 mA
2N3904
VDD
10 V 100 k
0.1 µF
SAME
DEVICE TYPE
AS DUT
FERRITE
100
BEAD
DUT
Vin = 15 Vpk; PULSE WIDTH ≤ 100 µs, DUTY CYCLE ≤ 10%
Figure 18. Gate Charge Test Circuit
6
Motorola TMOS Power MOSFET Transistor Device Data
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