BS170
RESISTIVE SWITCHING
+25 V
Vin
PULSE GENERATOR
40 pF
50 Ω
50 Ω
1.0 MΩ
125 Ω
20 dB
50 Ω ATTENUATOR
TO SAMPLING SCOPE
50 Ω INPUT
Vout
OUTPUT
INVERTED
Vout
ton
90%
(Vin Amplititude 10 Volts)
10%
INPUT Vin
PULSE
WIDTH
toff
10%
90%
50%
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
2.0
VDS = VGS
1.6
ID = 1.0 mA
1.2
0.8
0.4
0
50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. VGS(th) Normalized versus Temperature
2.0
VGS = 10 V
1.6
9.0 V
8.0 V
1.2
7.0 V
0.8
6.0 V
5.0 V
0.4
4.0 V
0
1.0
2.0
3.0
4.0
VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)
Figure 4. On–Region Characteristics
2.0
VGS = 10 V
1.6
9.0 V
8.0 V
1.2
7.0 V
0.8
6.0 V
0.4
5.0 V
4.0 V
0
10
20
30
40
VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristics
100
80
VGS = 0 V
60
40
Ciss
20
Coss
Crss
0
10
20
30
40
50
60
VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus
Drain–To–Source Voltage
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data