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ESDA6V1-5SC6 데이터 시트보기 (PDF) - STMicroelectronics

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ESDA6V1-5SC6
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ESDA6V1-5SC6 Datasheet PDF : 5 Pages
1 2 3 4 5
ESDA6V1-5SC6
Table 2: Absolute Maximum Ratings (Tamb = 25°C)
Symbol
Parameter
VPP ESD discharge
MIL STD 883E - Method 3015-7
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
Value
25
20
15
PPP Peak pulse power (8/20µs)
Tj Junction temperature
Tstg Storage temperature range
TL
Maximum lead temperature for soldering during 10 s at 5mm for
case
100
150
-55 to +150
260
Top Operating temperature range (note 1)
-40 to +125
Note 1: The evolution of the operating parameters versus temperature is given by curves and αT parameter.
Table 3: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VCL Clamping voltage
IRM Leakage current
IPP Peak pulse current
αT Voltage temperature coefficient
VF Forward voltage drop
C Capacitance
Rd Dynamic resistance
I
IF
VBR
Vcl
VRM
VF
IRM
Slope = 1/Rd
IPP
Unit
kV
W
°C
°C
°C
°C
V
Type
VBR @
IR
min. max.
V
V
mA
ESDA6V1-5SC6 6.1 7.2
1
Note 2: Square pulse, IPP = 15A, tp=2.5µs.
Note 3: VBR = αT* (Tamb -25°C) * VBR (25°C).
IRM @ VRM
max.
µA
V
1
3
Rd
typ.
note 2
m
590
αT
C
max. typ.
note 3 0V bias
10-4/°C pF
6
50
VF @ IF
max.
V mA
1.25 200
Figure 3: Peak power dissipation versus initial
junction temperature
Figure 4: Peak pulse power versus exponential
pulse duration (Tj initial = 25 °C)
PPP[Tj initial] / PPP[Tj initial=25°C]
1.1
PPP(W)
1000
1.0
0.9
0.8
0.7
0.6
100
0.5
0.4
0.3
0.2
0.1
Tj initial (°C)
0.0
0
25
50
75
100
125
150
175
10
1
tp(µs)
10
100
2/5

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