HGTP3N60C3 데이터 시트보기 (PDF) - Fairchild Semiconductor
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HGTP3N60C3 Datasheet PDF : 7 Pages
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HGTD3N60C3S, HGTP3N60C3
Absolute Maximum Ratings TC = 25oC
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .tSC
ALL TYPES
600
6
3
24
±20
±30
18A at 480V
33
0.27
100
-40 to 150
300
260
8
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
oC
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 82Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Collector to Emitter Breakdown Voltage
BVCES IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BV ECS
I CES
V CE(SAT)
VGE(TH)
IC = 3mA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 150oC
IC = IC110,
TC = 25oC
VGE = 15V
TC = 150oC
IC = 250µA, VCE = VGE TC = 25oC
16
30
-
V
-
-
250
µA
-
-
2.0
mA
-
1.65
2.0
V
-
1.85
2.2
V
3.0
5.5
6.0
V
IGES
SSOA
VGE = ±25V
-
TJ = 150oC,
VCE(PK) = 480V 18
RG = 82Ω,
VGE = 15V, L = 1mH
VCE(PK) = 600V
2
-
±250
nA
-
-
A
-
-
A
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
RθJC
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 82Ω
L = 1mH
Test Circuit (Figure 18)
-
8.3
-
V
-
10.8
13.5
nC
-
13.8
17.3
nC
-
5
-
ns
-
10
-
ns
-
325
400
ns
-
130
275
ns
-
85
-
µJ
-
245
-
µJ
-
-
3.75
oC/W
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3 and HGTD3N60C3S were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On losses include diode losses.
©2001 Fairchild Semiconductor Corporation
HGTD3N60C3S, HGTP3N60C3 Rev. B
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