T810-400B(1999) 데이터 시트보기 (PDF) - STMicroelectronics
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T810-400B Datasheet PDF : 5 Pages
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T810-xxxB / T835-xxxB
THERMAL RESISTANCES
Symbol
Rth (j-c)
Rth (j-c)
Rth (j-a)
Parameter
Junction to case for DC
Junction to case for AC 360° conduction angle ( F= 50 Hz)
Junction to ambient (S = 0.5 cm2)
Value
2.1
1.6
70
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG(AV) = 1 W PGM= 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT
VGT
VGD
IL
IH *
VTM *
IDRM
IRRM
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
IG=1.2 IGT
IT= 100mA gate open
ITM= 11A tp= 380µs
VDRM Rated
VRRM Rated
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
I-II-III
I-II-III
I-II-III
I-II-III
dV/dt * Linear slope up to
VD=67%VDRM
gate open
Tj=125°C
(dI/dt)c * (dV/dt)c = 0.1V/µs
Tj=125°C
(dV/dt)c = 15V/µs
Tj=125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MAX
MAX
MIN
MAX
MAX
MAX
MAX
MAX
MIN
MIN
MIN
Suffix
T810
T835
10
35
1.3
0.2
25
60
15
35
1.5
10
2
50
500
5.4
9
2.7
4.5
Unit
mA
V
V
mA
mA
V
µA
mA
V/µs
A/ms
A/ms
ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment
T 8 10 - 600 B
TRIAC
CURRENT
VOLTAGE
SENSITIVITY
PACKAGE
B = DPAK
2/5
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