T810-400B(1999) 데이터 시트보기 (PDF) - STMicroelectronics
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T810-400B Datasheet PDF : 5 Pages
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T810-xxxB / T835-xxxB
Fig 1a: Maximum power dissipation versus RMS
on-state current (T810 only).
P(W)
10
8
6
α
α
α
4
2
α
0
0
1
α
IT(RMS)(A)
2
3
4
5
180°
α
α
678
Fig 1b: Maximum power dissipation versus RMS
on-state current. (T835 only)
P(W)
10
8
α
α
6
α
4
α
2
α
180°
α
α
IT(RMS)(A)
0
0
1
2
3
4
5
6
7
8
Fig 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink+contact.
Fig 3: RMS on-state current versus ambient tem-
perature.
P(W)
10
8
Rth=10 °C/W
Rth=5°C/W
6
Rth=15 °C/W
4
2α
0
0
25
Tamb(°C)
50
75
Tcase (°C)
110
Rth=0°C/W
115
120
125
100
125
IT(RMS)(A)
9
8
7
6
5
4
3
2
1
Tamb(°C)
0
0
25
50
α
75
100
125
Fig 4: Relative variation of thermal impedance
junction to case versus pulse duration.
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
0.2
0.1
1E-3
tp(s)
1E-2
1E-1
1E+0
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
IGT,IH[Tj]/IGT,IH[Tj=25°C]
2.5
2.0
IGT
1.5
IH
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
3/5
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