CNY17 데이터 시트보기 (PDF) - Infineon Technologies

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CNY17

TRIOS® Phototransistor Optocoupler

Infineon Technologies 

Figure 6. Current transfer ratio versus

diode current (TA=50°C)

VCE=5.0 V, IC/IF=f (IF)

Figure 9. Transistor characteristics

(B=550) CNY17-3, -4 IC=f(VCE)

(TA=25°C, IF=0)

Figure 12. Collector emitter off-state

current ICEO=f (V, T) (TA=25°C, IF=0)

1

2

3

4

Figure 7. Current transfer ratio versus

diode current (TA=75°C) VCE=5.0 V

Figure 10. Output characteristics

CNY17-3, -4 (TA=25°C) IC=f(VCE)

Figure 13. Saturation voltage versus

collector current and modulation

depth CNY17-1 VCEsat=f (IC) (TA=25°C)

1

2

3

4

Figure 8. Current transfer ratio versus

temperature (IF=10 mA, VCE=5.0 V)

IC/IF=f (T)

Figure 11. Forward voltage VF=f (IF)

Figure 14. Saturation voltage versus

collector current and modulation

depth CNY17-2 VCEsat=f (IC)

(TA=25°C)

4

3

2

1

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–70

CNY17

February 24, 2000-20

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