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BT201D(2008) 데이터 시트보기 (PDF) - STMicroelectronics

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BT201D
(Rev.:2008)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BT201D Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
THBT15011, THBT20011, THBT27011
Table 5. Dynamic breakover voltages (transversal mode)
Type
Symbol
Test conditions(1)
THBT15011D
VBO
10/700μs
1.2/50μs
2/10μs
1.5kV
1.5kV
2.5kV
Rp=10Ω
Rp=10Ω
Rp=62Ω
IPP=30A
IPP=30A
IPP=38A
THBT20011D
VBO
10/700μs
1.2/50μs
2/10μs
1.5kV
1.5kV
2.5kV
Rp=10Ω
Rp=10Ω
Rp=62Ω
IPP=30A
IPP=30A
IPP=38A
THBT27011D
VBO
10/700μs
1.2/50μs
2/10μs
1.5kV
1.5kV
2.5kV
Rp=10Ω
Rp=10Ω
Rp=62Ω
IPP=30A
IPP=30A
IPP=38A
1. See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card.
Figure 4. Test circuit 1 for IBO and VBO parameters
Max Unit
190
190
V
200
270
270
V
280
360
360
V
400
220V 50Hz
K
ton = 20ms
Vout
R1 = 140Ω
R2 = 240Ω
DUT
VBO
measurement
1/4
IBO
measurement
TEST PROCEDURE
Pulse test duration (tp = 20ms):
for Bidirectional devices = Switch K is closed
for Unidirectional devices = Switch K is open
VOUT selection:
Device with VBO < 200 VVOUT = 250 VRMS, R1 = 140 Ω
Device with VBO 200 VVOUT = 480 VRMS, R2 = 240 Ω
4/10

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