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TDA8170 데이터 시트보기 (PDF) - STMicroelectronics

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TDA8170
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TDA8170 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TDA8170
ABSOLUTE MAXIMUM RATINGS
Symbol
VS
V5, V6
V3
V1, V7
Io
Io
Io
I3
I3
Ptot
Tstg, Tj
Parameter
Supply Voltage (pin 2)
Flyback Peak Voltage
Voltage at Pin 3
Amplifier Input Voltage
Output Peak Current (non repetitive, t = 2 msec)
Output Peak Current at f = 50 or 60 Hz, t 10 µsec
Output Peak Current at f = 50 or 60 Hz, t > 10 µsec
Pin 3 DC Current at V5 < V2
Pin 3 Peak to Peak Flyback Current at f= 50 or 60 Hz, tfly 1.5msec
Total Power Dissipation at Tcase = 90 °C
Storage and Junction Temperature
Value
Unit
35
V
60
V
+ Vs
+ Vs, – 0.5
V
2.5
A
3
A
2
A
100
mA
3
A
20
W
– 40, +150
°C
THERMAL DATA
Symbol
Parameter
Rth j–case Thermal Resistance Junction-case
Max.
Value
3
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(refer to the test circuits, VS = 35V, Tamb = 25oC unless otherwise specified)
Symbol
I2
I6
I1
V7
V7
VS
V3L
V5
V5L
V5H
Tj
Parameter
Pin 2 Quiescent Current
Pin 6 Quiescent Current
Amplifier Input Bias Current
Reference Voltage
Reference Voltage Drift versus Supply Voltage
Pin 3 Saturation Voltage to GND
Quiescent Output Voltage
Output Saturation Voltage to GND
Output Saturation Voltage to Supply
Junction Temperature for Thermal Shut Down
Test Conditions
I3 = 0, I5 = 0
I3 = 0, I5 = 0
V1 = 1 V
Vs = 15 to 30 V
I3 = 20 mA
Vs = 35 V , Ra = 39 k
Vs = 15 V , Ra = 13 k
I5 = 1.2 A
I5 = 0.7 A
– I5 = 1.2 A
– I5 = 0.7 A
Min. Typ. Max. Unit Fig.
8 16 mA 1a
16 36 mA 1a
– 0.1 – 1 µA 1a
2.2
V 1a
1 2 mV/V 1a
1
V 1c
18
V 1d
7.5
V 1d
1 1.4 V 1c
0.7 1 V 1c
1.6 2.2 V 1b
1.3 1.8 V 1b
140
°C
3/7

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