UPA836TF 데이터 시트보기 (PDF) - NEC => Renesas Technology

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UPA836TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

NEC => Renesas Technology 

Q1

Noise Figure vs. Collector Current

4

f = 2 GHz

VCE = 3 V

3

2

1

0

0.5 1 2

5 10 20

50

Collector current IC (mA)

Feedback Capacitance vs. Collector to Base Voltage

0.6

f = 1 MHz

0.5

0.4

0.3

0.2

0.5

1

2

5

10

20

Collector to base voltage VCB (V)

Q2

Noise Figure vs. Frequency

VCE = 1 V

IC = 5 mA

1.5

1

0.5

0.1

0.5

1.0

2

Frequency f (GHZ)

µPA836TF

Q2

Noise Figure vs. Collector Current

3

VCE = 1 V

f = 2 GHZ

2

f = 1 GHz

1

1

2

3

5 7 10

Collector current IC (mA)

Feedback Capacitance vs. Collector to Base Voltage

f = 1 MHZ

1.0

0.5

0.1

1

5

10

20

Collector to base voltage VCB (V)

Maximum Available Gain,

Insertion Power Gain vs. Frequency

30

MAG

VCE = 1 V

IC = 5 mA

20

|S21e|2

10

0

0.1

0.5 1

5

Frequency f (GHZ)

6

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