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IXBH9N160G 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXBH9N160G
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXYS CORPORATION
IXBH9N160G Datasheet PDF : 4 Pages
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IXBH 9N140G
IXBH 9N160G
140
120
100
V
CE
= 960V
V
GE
= 10V
R
G
= 27
Ω
T
J
= 125°C
80
60
40
0 2 4 6 8 10 12 14 16
I
C
- Amperes
Fig. 7 Typ. Fall Time
10
250
200
150
V
CE
= 960V
V
GE
= 10V
I
C
= 5A
T
J
= 125°C
100
50
0
0 10 20 30 40 50 60
R
g
- Ohms
Fig. 8 Typ. Turn Off Delay Time
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
Fig. 9 Typ. Transient Thermal Impedance
0.1
IXBH 9-140/160G
1
C4
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4 -4
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