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HA-5127/883 데이터 시트보기 (PDF) - Intersil

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HA-5127/883 Datasheet PDF : 5 Pages
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HA-5127/883
Die Characteristics
DIE DIMENSIONS:
104 x 65 x 19 mils ± 1 mils
2650 x 1650 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
3.6 x 105A/cm2
This device meets Glassivation Integrity Test Requirement
per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph 30.5.5.4.
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 63
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5127/883
BAL
BAL
-IN
V+
+IN
OUT
V-
NC
Spec Number 511008-883
5

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