HA-5177/883 데이터 시트보기 (PDF) - Intersil

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HA-5177/883

Ultra Low Offset Voltage Operational Amplifier

Intersil 

HA-5177/883

Die Characteristics

DIE DIMENSIONS:

72 x 103 x 19 mils ± 1 mils

1840 x 2620 x 483µm ± 25.4µm

METALLIZATION:

Type: Al, 1% Cu

Thickness: 16kÅ ± 2kÅ

GLASSIVATION:

Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)

Silox Thickness: 12kÅ ± 2kÅ

Nitride Thickness: 3.5kÅ ± 1.5kÅ

WORST CASE CURRENT DENSITY:

6.0 x 104A/cm2

SUBSTRATE POTENTIAL (Powered Up): V-

TRANSISTOR COUNT: 71

PROCESS: Bipolar Dielectric Isolation

Metallization Mask Layout

BAL1

HA-5177/883

V+

OUT

NC

BAL2

-IN +IN

V-

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

Spec Number 511041-883

5

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