AT-41435 데이터 시트보기 (PDF) - HP => Agilent Technologies

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AT-41435

Up to 6 GHz Low Noise Silicon Bipolar Transistor

HP => Agilent Technologies 

AT-41410 Absolute Maximum Ratings

Symbol

Parameter

Units

Absolute

Maximum[1]

VEBO

VCBO

VCEO

IC

PT

Tj

TSTG

Emitter-Base Voltage

V

Collector-Base Voltage

V

Collector-Emitter Voltage

V

Collector Current

mA

Power Dissipation [2,3]

mW

Junction Temperature

°C

Storage Temperature

°C

1.5

20

12

60

500

200

-65 to 200

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 5.9 mW/°C for TC > 115°C.

4. The small spot size of this technique results in a higher, though more

accurate determination of θjc than do alternate methods. See MEASURE-

MENTS section “Thermal Resistance” for more information.

Thermal Resistance[2,4]:

θjc = 170°C/W

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions

|S21E|2 Insertion Power Gain; VCE = 8 V, IC = 25 mA

Units Min. Typ. Max.

f = 2.0 GHz dB

12.0

f = 4.0 GHz

6.5

P1 dB

Power Output @ 1 dB Gain Compression

VCE = 8 V, IC = 25 mA

f = 2.0 GHz dBm

19.0

f= 4.0 GHz

18.5

G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA

f = 2.0 GHz dB

14.0

f = 4.0 GHz

9.5

NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA

GA

Gain @ NFO; VCE = 8 V, IC = 10 mA

f = 1.0 GHz dB

f = 2.0 GHz

f = 4.0 GHz

1.3

1.6 1.9

3.0

f = 1.0 GHz dB

18.5

f = 2.0 GHz

13.0 14.0

f = 4.0 GHz

10.0

fT

Gain Bandwidth Product: VCE = 8 V, IC = 25 mA

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA

ICBO Collector Cutoff Current; VCB = 8 V

IEBO Emitter Cutoff Current; VEB = 1 V

CCB

Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

GHz

— 30

µA

µA

pF

8.0

150 270

0.2

1.0

0.2

Notes:

1. For this test, the emitter is grounded.

4-105

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