BZT03 데이터 시트보기 (PDF) - Philips Electronics

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BZT03

Voltage regulator diodes

Philips Electronics 

Philips Semiconductors

Voltage regulator diodes

Product specification

BZT03 series

TYPE

NUMBER

BZT03-C180

BZT03-C200

BZT03-C220

BZT03-C240

BZT03-C270

BZT03-C300

BZT03-C330

BZT03-C360

BZT03-C390

BZT03-C430

BZT03-C470

BZT03-C510

REVERSE

BREAKDOWN

VOLTAGE

V(BR)R (V)

at Itest

MIN.

168

188

208

228

251

280

310

340

370

400

440

480

TEMPERATURE

COEFFICIENT

SZ (%/K) at Itest

MIN.

0.09

0.09

0.09

0.09

0.09

0.09

0.09

0.09

0.09

0.09

0.09

0.09

MAX.

0.13

0.13

0.13

0.13

0.13

0.13

0.13

0.13

0.13

0.13

0.13

0.13

TEST

CURRENT

CLAMPING

VOLTAGE

Itest

(mA)

5

5

2

2

2

2

2

2

2

2

2

2

V(CL)R (V)

MAX.

249

276

305

336

380

419

459

498

537

603

655

707

at IRSM

(A)

note 1

1.2

1.1

1.0

0.9

0.8

0.72

0.65

0.60

0.56

0.50

0.45

0.42

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

IR (µA)

MAX.

5

5

5

5

5

5

5

5

5

5

5

5

at VR

(V)

150

160

180

200

220

240

270

300

330

360

390

430

Note

1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE UNIT

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

lead length = 10 mm

46

K/W

note 1

100

K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.6.

For more information please refer to the “General Part of associated Handbook”.

1996 Jun 11

6

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