RJP30K3DPP-M0 데이터 시트보기 (PDF) - Renesas Electronics

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RJP30K3DPP-M0

Silicon N Channel IGBT High Speed Power Switching

Renesas Electronics 

RJP30K3DPP-M0

Silicon N Channel IGBT

High Speed Power Switching

Features

 Trench gate and thin wafer technology (G6H-II series)

 Low collector to emitter saturation voltage VCE(sat) = 1.1V typ

 High speed switching tr = 90 ns typ, tf = 250 ns typ

 Low leak current ICES = 1 A max

 Isolated package TO-220FL

Outline

RENESAS Package code: PRSS0003AF-A)

(Package name: TO-220FL)

G

1

23

Preliminary Datasheet

R07DS0501EJ0100

Rev.1.00

Jul 05, 2011

C

1. Gate

2. Collector

3. Emitter

E

Absolute Maximum Ratings

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Collector peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

Symbol

VCES

VGES

IC

ic(peak) Note1

PC Note2

j-c

Tj

Tstg

Ratings

360

±30

40

300

30

4.17

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

W

°C/W

°C

°C

R07DS0501EJ0100 Rev.1.00

Jul 05, 2011

Page 1 of 6

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