RJP30K3DPP-M0 데이터 시트보기 (PDF) - Renesas Electronics
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RJP30K3DPP-M0 Datasheet PDF : 7 Pages
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RJP30K3DPP-M0
Main Characteristics
Maximum Safe Operation Area
1000
100
10 μs
10
1
0.1
Ta = 25°C
1 shot pulse
0.01
0.1
1
10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
200
8V
160
10 V
15 V
120
7.5 V
7V
6.5 V
6V
80
5.5 V
40
VGE = 5 V
0
Ta = 25°C, Pulse Test
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
10
Pulse Test
Ta = 25°C
8
6
IC = 40 A
80 A
120 A
4
2
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
R07DS0501EJ0100 Rev.1.00
Jul 05, 2011
Preliminary
Typical Output Characteristics (1)
100
Ta = 25°C
Pulse Test
80
10 V
60 15 V
6.5 V
7V
8V
40
5.5 V
20
VGE = 5 V
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
100
VCE = 10 V
Pulse Test
80
60
Tc = 75°C
25°C
50
–25°C
20
0
0
2
4
6
8
10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
10
VGE = 15 V
Pulse Test
Tc = –25°C
1
25°C 75°C
0.1
12
5 10 20 50 100 200
Collector Current IC (A)
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