FQPF10N20C 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQPF10N20C Datasheet PDF : 10 Pages
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FQP10N20C / FQPF10N20C
N-Channel QFET® MOSFET
200 V, 9.5 A, 360 mΩ
November 2013
Features
• 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V,
ID = 4.75 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 40.5 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
GDS
TO-220
GDS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP10N20C FQPF10N20C
200
9.5
9.5 *
6.0
6.0 *
38
38 *
± 30
210
9.5
7.2
5.5
72
38
0.57
0.3
-55 to +150
300
FQP10N20C
1.74
62.5
FQPF10N20C
3.33
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
1
FQP10N20C / FQPF10N20C Rev. C1
www.fairchildsemi.com
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