FQPF10N20C 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FQPF10N20C

N-Channel QFET® MOSFET 200 V, 9.5 A, 360 mΩ

Fairchild Semiconductor 

Typical Characteristics (Continued)

100 D = 0 .5

1 0 -1

0 .2

0 .1

0.0 5

0.0 2

0.0 1

sin g le p u lse

※ N otes :

1 . Z θ J C( t ) = 1 . 7 4 ℃ / W M a x .

2 . D u ty F a c to r, D = t1/t2

3 . T J M - T C = P D M * Z θ J C( t )

1 0 -2

1 0 -5

1 0 -4

1 0 -3

1 0 -2

1 0 -1

100

101

t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP10N20C

D = 0.5

100

0 .2

0 .1

0.0 5

1 0 -1

0 .0 2

0.0 1

※ N otes :

1 . Z θ J C( t ) = 3 . 3 3 ℃ / W M a x .

2. D uty F a cto r, D = t1/t2

3 . T J M - T C = P D M * Z θ J C( t )

s in g le p u ls e

1 0 -2

1 0 -5

1 0 -4

1 0 -3

1 0 -2

1 0 -1

100

101

t1, S q u a re W a ve P u lse D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF10N20C

©2003 Fairchild Semiconductor Corporation

5

FQP10N20C / FQPF10N20C Rev. C1

www.fairchildsemi.com

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