SM10LZ47 데이터 시트보기 (PDF) - Toshiba
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SM10LZ47 Datasheet PDF : 3 Pages
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SM10LZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM10LZ47
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 800V
l R.M.S. On−State Current
: IT (RMS) = 10A
l High Commutation (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak Off−State Voltage
R.M.S On−State Current
(Full Sine Waveform)
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
IGM
Tj
Tstg
VISOL
800
10
100 (50Hz)
110 (60Hz)
50
50
5
0.5
10
2
−40~125
−40~125
1500
Note:
di / dt test condition
VDRM = 0.5 × Rated, ITM ≤ 15A, tgw ≥ 10µs,
tgr ≤ 250ns, igp = IGT × 2.0
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
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13−10H1A
1
2001-07-10
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