M10LZ47 데이터 시트보기 (PDF) - Toshiba
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M10LZ47 Datasheet PDF : 3 Pages
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SM10LZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
Gate Trigger Voltage
II
III
I
Gate Trigger Current
II
III
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of Off−State Voltage
at Commutation
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
―
―
20
µA
VGT
VD = 12V,
RL = 20Ω
T2 (+) , Gate (+) ―
―
1.5
T2 (+) , Gate (−) ―
―
1.5
V
T2 (−) , Gate (−) ―
―
1.5
IGT
VD = 12V,
RL = 20Ω
T2 (+) , Gate (+) ―
―
30
T2 (+) , Gate (−) ―
―
30
mA
T2 (−) , Gate (−) ―
―
30
VTM
ITM = 15A
―
―
1.5
V
VGD
VD = Rated, Tc = 125°C
0.2
―
―
V
IH
VD = 12V, ITM = 1A
―
―
50
mA
Rth (j−c)
dv / dt
Junction to Case, AC
VDRM = 600V, Tj = 125°C
Exponential Rise
―
―
3.4 °C / W
―
300
― V / µs
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = − 5.5A / ms
10
―
― V / µs
MARKING
NUMBER
SYMBOL
*1
TOSHIBA PRODUCT MARK
*2
TYPE
SM10LZ47
MARK
M10LZ47
Example
*3
8A: January 1998
8B: February 1998
8L: December 1998
2
2001-07-10
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