AO4616 데이터 시트보기 (PDF) - Unspecified

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AO4616

Complementary Enhancement Mode Field Effect Transistor

Unspecified 

AO4616

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

-30

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS=±20V

VGS(th) Gate Threshold Voltage

VDS=VGS ID=-250µA

-1.4

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

30

VGS=-10V, ID=-7.1A

RDS(ON) Static Drain-Source On-Resistance

TJ=125°C

VGS=-4.5V, ID=-5.6A

gFS

Forward Transconductance

VDS=-5V, ID=-7.1A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge (10V)

Qg(4.5V) Total Gate Charge (4.5V)

Qgs

Gate Source Charge

VGS=-10V, VDS=-15V, ID=-7.1A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

VGS=-10V, VDS=-15V, RL=2.2Ω,

tD(off)

Turn-Off DelayTime

RGEN=3Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=-7.1A, dI/dt=100A/µs

Qrr

Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=100A/µs

Typ Max Units

V

-1

µA

-5

±100 nA

-2 -2.7 V

A

20

25

mΩ

27

33

29

40 mΩ

19.6

S

-0.7 -1

V

-4.2 A

1573

pF

319

pF

211

pF

6.7

Ω

30.9

nC

16.1

nC

8

nC

4.4

nC

9.5

ns

8

ns

44.2

ns

22.2

ns

25.5

ns

14.7

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

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raetsinisgta. nce rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

SOA curve provides a single pulse rating.

Rev 0 : July 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

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