2SK3762 데이터 시트보기 (PDF) - Unspecified
부품명
상세내역
제조사
2SK3762 Datasheet PDF : 6 Pages
| |||
2SK3762
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±30 V, V DS = 0 V
±10 µA
V (BR) GSS ID = ±10 µA, V GS = 0 V
±30
V
IDSS
VDS = 720 V, V GS = 0 V
100 µA
V (BR) DSS ID = 10 mA, VGS = 0 V
900
V
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
RDS (ON) VGS = 10 V, ID = 1.5 A
5.6 6.4
Ω
Yf s
VDS = 20 V, ID = 1.5 A
1.0 2.0
S
Ciss
Crss
Coss
VDS = 25 V, V GS = 0 V, f = 1 MHz
470
10
pF
50
tr
10 V
VGS
ID = 1.5 A VOUT
20
0V
ton
50 Ω
RL =
60
133 Ω
ns
tf
30
VDD ∼− 200 V
toff
Duty <= 1%, tw = 10 µs
100
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID =2.5 A
Qgd
12
7
nC
5
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Marking
Symbol
IDR
ID R P
VDSF
trr
Qrr
Test Condition
IDR =2.5 A, V GS = 0 V
IDR = 2.5 A, V GS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
2.5
A
7.5
A
−1.7 V
720
ns
3.6
µC
※
K3762
※ Lot Number
TYPE
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2
2004-02-26
Share Link: 