2SD2138 데이터 시트보기 (PDF) - Unspecified
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2SD2138 Datasheet PDF : 3 Pages
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Power Transistors
2SD2138, 2SD2138A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1418 and 2SB1418A
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
I Features
• High forward current transfer ratio hFE which has satisfactory
linearity
• Allowing supply with the radial taping
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base 2SD2138
VCBO
60
V
voltage
2SD2138A
80
Collector to
2SD2138
VCEO
60
V
emitter voltage 2SD2138A
80
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
4
A
Collector current
IC
2
A
Collector power TC = 25°C
PC
15
W
dissipation
Ta = 25°C
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Emitter
2: Collector
3: Base
MT-4-A1 Package
Internal Connection
C
B
E
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Collector cutoff
current
2SD2138
2SD2138A
Collector cutoff
current
2SD2138
2SD2138A
Emitter cutoff current
Collector to emitter
voltage
2SD2138
2SD2138A
ICBO
ICEO
IEBO
VCEO
VCE = 60 V, IE = 0
VCE = 80 V, IE = 0
VCE = 30 V, IB = 0
VCE = 40 V, IB = 0
VEB = 5 V, IC = 0
IC = 30 mA, IB = 0
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time
hFE1
hFE2 *
VBE
VCE(sat)
fT
ton
toff
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 2 A
VCE = 4 V, IC = 2 A
IC = 2 A, IB = 8 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 2 A, IB1 = 8 mA, IB2 = −8 mA,
VCC = 50 V
Note) *: Rank classification
Rank
Q
R
hFE2 2 000 to 5 000 4 000 to 10 000
Min
60
80
1 000
2 000
Typ Max
100
100
100
100
100
10 000
2.8
2.5
20
0.4
4
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
337
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