2SK2009TE85R(2007) 데이터 시트보기 (PDF) - Toshiba
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2SK2009TE85R Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2009
High Speed Switching Applications
Analog Switch Applications
• High input impedance.
• Low gate threshold voltage: Vth = 0.5~1.5 V
• Excellent switching times: ton = 0.06 μs (typ.)
toff = 0.12 μs (typ.)
• Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)
• Small package.
• Enhancement-mode
Marking
Equivalent Circuit
2SK2009
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDS
VGSS
ID
PD
Tch
Tstg
30
V
±20
V
200
mA
200
mW
150
°C
−55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with caution.
1
2007-11-01
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