2SJ512 데이터 시트보기 (PDF) - Unspecified

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2SJ512

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)

Unspecified 

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Drain cut−off current

Drain−source breakdown

voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Symbol

Test Condition

IGSS

IDSS

VGS = ±16 V, VDS = 0 V

VDS = −250 V, VGS = 0 V

V (BR) DSS ID = −10 mA, VGS = 0 V

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VDS = −10 V, ID = −1 mA

VGS = −10 V, ID = −2.5 A

VDS = −10 V, ID = −2.5 A

VDS = −10 V, VGS = 0 V, f = 1 MHz

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

toff

Total gate charge (Gate−source

plus gate−drain)

Qg

VDD ≈ −200 V, VGS = −10 V,

Gate−source charge

Qgs

ID = −5 A

Gate−drain (“miller”) charge

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = −5 A, VGS = 0 V

IDR = −5 A, VGS = 0 V

dIDR / dt = 100 A / μs

Marking

2SJ512

Min Typ. Max Unit

—

—

±10

μA

—

— −100 μA

−250 —

—

V

−1.5 — −3.5

V

—

1.0 1.25

Ω

1.8 3.7

—

S

— 800 —

—

80

—

pF

— 250 —

—

16

—

—

35

—

ns

—

9

—

—

70

—

—

22

—

—

14

—

nC

—

8

—

Min Typ. Max Unit

—

—

−5

A

—

— −20

A

—

—

2.0

V

— 205 —

ns

—

2.1

—

μC

J512

Part No. (or abbreviation code)

Lot No.

Note 4

Note 4: A line under a Lot No. identifies the indication of product

Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

2

2009-09-29

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