MMSZ10ET3 데이터 시트보기 (PDF) - ON Semiconductor
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MMSZ10ET3 Datasheet PDF : 7 Pages
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MMSZ2V4ET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
VZ1 (V)
(Notes 7 and 8)
ZZT1
(Note 9)
VZ2 (V)
(Notes 7 and 8)
ZZT2
(Note 9)
Max Reverse
Leakage Current
Device
MMSZ27ET1, G
Device
Marking
CN8
Min
25.65
@ IZT1 = 2 mA
Nom
Max
27
28.35
@ IZT2 = 0.1 mA
@ IZT2 =
0.5 mA
IR @ VR
W
Min
Max
W
mA
V
80
25
28.9
300
0.05
18.9
MMSZ30ET1
CN9
28.50
30
31.50
80
27.8
32
300
0.05
21
MMSZ33ET1
CP1
31.35
33
34.65
80
30.8
35
325
0.05
23.1
MMSZ36ET1
CP2
34.20
36
37.80
90
33.8
38
350
0.05
25.2
MMSZ39ET1
CP3
37.05
39
40.95
130
36.7
41
350
0.05
27.3
MMSZ43ET1, G
CP4
40.85
43
45.15
150
39.7
46
375
0.05
30.1
MMSZ47ET1
CP5
44.65
47
49.35
170
43.7
50
375
0.05
32.9
MMSZ51ET1
CP6
48.45
51
53.55
180
47.6
54
400
0.05
35.7
MMSZ56ET1
CP7
53.20
56
58.80
200
51.5
60
425
0.05
39.2
7. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage.
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
9. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
* The “G” suffix indicates Pb−Free package available.
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