DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TA8266HQ 데이터 시트보기 (PDF) - Toshiba

부품명
상세내역
제조사
TA8266HQ Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TA8266HQ
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Peak supply voltage (0.2 s)
DC supply voltage
Operation supply voltage
Output current (peak)
Power dissipation
Operation temperature
Storage temperature
VCC (surge)
50
V
VCC (DC)
25
V
VCC (opr)
18
V
IO (peak)
9
A
PD (Note5)
125
W
Topr
40~85
°C
Tstg
55~150
°C
Note5: Package thermal resistance θj-T = 1°C/W (typ.)
(Ta = 25°C, with infinite heat sink)
The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not
be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the
device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no
longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage and/or
degradation to any other equipment. Applications using the device should be designed such that each absolute
maximum rating will never be exceeded in any operating conditions. Before using, creating and/or producing
designs, refer to and comply with the precautions and conditions set forth in this documents.
Electrical Characteristics
(unless otherwise specified VCC = 13.2 V, f = 1 kHz, RL = 4 , Ta = 25°C)
Characteristics
Quiescent current
Output power
Total harmonic distortion
Voltage gain
Voltage gain ratio
Output noise voltage
Ripple rejection ratio
Cross talk
Output offset voltage
Input resistance
Stand-by current
Stand-by control voltage
Mute control voltage
Mute attenuation
Symbol
Test
Circuit
Test Condition
ICCQ
VIN = 0
POUT MAX (1) VCC = 14.4 V, max Power
POUT MAX (2) VCC = 13.7 V, max Power
POUT (1)
VCC = 14.4 V, THD = 10%
POUT (2)
THD = 10%
THD
POUT = 5 W
GV
VOUT = 0.775 Vrms (0dBm)
GV
VOUT = 0.775 Vrms (0dBm)
VNO (1)
Rg = 0 , DIN45405
VNO (2)
Rg = 0 , BW = 20 Hz~20 kHz
R.R.
frip = 100 Hz, Rg = 620
Vrip = 0.775 Vrms (0dBm)
C.T.
Rg = 620
VOUT = 0.775 Vrms (0dBm)
VOFFSET
RIN
ISB
Stand-by condition
VSB H
Power: ON
VSB L
Power: OFF
(Note6)
VM H
VM L
Mute: OFF
Mute: ON, R1 = 10 k
ATT M
Mute: ON,
VOUT = 7.75 Vrms (20dBm) at
Mute: OFF.
Min
17
32
1.0
40
150
3.0
0
0
80
Typ.
200
35
31
23
20
0.02
34
0
0.20
0.18
50
60
0
30
2
Open
90
Max Unit
400 mA
W
0.2
%
36
dB
1.0
mVrms
0.42
dB
dB
+150 mV
k
10
µA
VCC
V
1.5
0.5
V
dB
Note6: Muting function have to be controlled by open and low logic, which logic is a transistor, FET and µ-COM port
of IMUTE > 250 µA ability.This means than the mute control terminal : pin 22 must not be pulled-up.
8
2006-04-28

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]